DOI: 10.1002/adfm.201300509
Abstract:
Integrating materials with distinct lattice symmetries and dimensions is an effective design strategy toward realizing novel devices with unprecedented functionalities, but many challenges remain in synthesis and device design. Here, a heterojunction memory made of wurtzite ZnO nanorods grown on perovskite Nb‐doped SrTiO3 (NSTO) is reported, the electronic properties of which can be drastically reconfigured by applying a voltage and light. Despite of the distinct lattice structures of ZnO and NSTO, a consistent nature of single...
Excerpt:
Rs and the NSTO substrate, respectively. The current-voltage data were measured using a source meter (Keithley2635). The photoresponse of the ZnO/NSTO diode was measured by illuminating the samples with monochromatic light of wavelength 365 nm and intensity 2.5 W/cm 2 from a solid state UV LED (Agiltron 365A). During the photoresponse measurements, the diode was reverse biased with a voltage of ~ 0.2 V. Supporting Information Supporting Information is available from the Wiley Online Library or from the author. Acknowledgements This work is partially supported by the National...