A demonstration of half-metallicity in graphene using mn3o4 nanosheet

Published 2013

Moni Baskey (Sen) Assistant Professor in Chemistry (Burdwan University)

Shyamal Kumar Saha Professor, Department of Materials Science, Indian Association for the Cultivation of Science

DOI: 10.1016/j.carbon.2013.05.002

Abstract:

The recent prediction of the edge modification by a magnetic impurity spin to create half-metallicity in a graphene sheet is demonstrated. Ultrafine Mn 3 O 4 sheets of size 10 nm are grown on graphene to observe the remarkable effect of half-metallicity with a 90% change in magnetoresistance at room temperature. The demonstration of a huge negative magnetoresistance using a magnetic impurity spin will make graphene a potential candidate for spintronic devices...

Excerpt:

Raman spectroscopy was studied in Agiltron Inc.(R-3000) Raman Spectrometer...