Photodiode InGaAs PIN

SKU: PIND

A PIN photodetector is a semiconductor photodiode with a P-type / Intrinsic / N-type layer structure that converts incident light into electrical current with high speed and excellent linearity. When light is absorbed in the undoped intrinsic (I) region, photons generate electron–hole pairs, and an applied reverse bias rapidly sweeps the carriers out, producing an output current proportional to the optical power. PIN photodiodes are widely used due to their high bandwidth (up to 100 GHz for small-area devices), excellent linearity (critical for analog and RF-over-fiber applications), low noise compared to APDs, stable operation, and high reliability. We offer cost-effective PIN photodiodes with flat-window and ball-lens window options to support a wide range of coupling and system requirements. A 5–10 V reverse bias is recommended for power monitoring, sensing, and low-noise operation, while 10–15 V is used when maximum bandwidth is required. A matching high-gain, high-linearity amplifier with DC–500 MHz bandwidth is also available.
Due to their high sensitivity to electrostatic discharge, warranty coverage applies only to fully metal covered modules. Photodetectors are not covered by warranty. Please use them with great caution.